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| TN6715A / NZT6715 Discrete POWER & Signal Technologies TN6715A NZT6715 C E C C TO-226 B E B SOT-223 NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2 A. Sourced from Process 38. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25C unless otherwise noted Parameter Value 40 50 5.0 1.5 -55 to +150 Units V V V A C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJC RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient TN6715A 1.0 8.0 50 125 Max *NZT6715 1.0 8.0 125 Units W mW/C C/W C/W *Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2. (c) 1997 Fairchild Semiconductor Corporation TN6715A / NZT6715 NPN General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Current Emitter-Cutoff Current I C = 10 mA, IB = 0 I C = 100 A, I E = 0 I E = 100 A, IC = 0 VCB = 50 V, IE = 0 VEB = 5.0 V, IC = 0 40 50 5.0 0.1 0.1 V V V A A ON CHARACTERISTICS hFE DC Current Gain IC = 10 mA, VCE = 1.0 V IC = 100 mA, VCE = 1.0 V IC = 1.0 A, VCE = 1.0 V IC = 1.0 A, IB = 100 mA IC = 1.0 A, VCE = 1.0 V 55 60 50 250 0.5 1.2 VCE(sat) VBE(on) Collector-Emitter Saturation Voltage Base-Emitter On Voltage V V SMALL SIGNAL CHARACTERISTICS hfe Ccb Small-Signal Current Gain Collector-Base Capacitance I C = 50 mA, VCE = 10 V, f = 20 MHz VCB = 10 V, IE = 0, f = 1.0 MHz 2.5 20 30 pF *Pulse Test: Pulse Width 300 s, Duty Cycle 1.0% Typical Characteristics VCESAT- COLLECTOR-EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN Typical Pulsed Current Gain vs Collector Current V CE = 5V 125 C 25 C Collector-Emitter Saturation Voltage vs Collector Current 0.6 0.5 0.4 0.3 0.2 0.1 0 0.01 - 40 C 25C 125 C 500 400 300 200 - 40 C = 10 100 0 0.001 0.01 0.1 I C - COLLECTOR CURRENT (A) 1 2 0.1 1 I C - COLLECTOR CURRENT (A) P 38 3 TN6715A / NZT6715 NPN General Purpose Amplifier (continued) Typical Characteristics (continued) 1 VBE(ON) BASE-EMITTER ON VOLTAGE (V) - VBE(ON) BASE-EMITTER ON VOLTAGE (V) - Base-Emitter ON Voltage vs Collector Current Base-Emitter ON Voltage vs Collector Current 1 0.8 - 40 C 25C 0.8 - 40 C 25C 0.6 125 C 0.6 125 C 0.4 VCE = 5V 0.01 0.1 C - COLLECTOR CURRENT (A) P 38 0.4 VCE = 5V 0.01 0.1 I C - COLLECTOR CURRENT (A) Pr38 0.2 0.001 I 1 0.2 0.001 1 C OBO - COLLECTOR-BASE CAPACITANCE (pF) Collector-Cutoff Current vs Ambient Temperature I CBO COLLECTOR CURRENT (nA) 100 VCB = 40V Collector-Base Capacitance vs Collector-Base Voltage 40 10 30 1 20 0.1 10 25 50 75 100 125 T A - AMBIENT TEMPERATURE (C) 150 0 0 4 8 12 Pr 38 16 20 24 28 V CB - COLLECTOR-BASE VOLTAGE (V) h FE - GAIN BANDWIDTH PRODUCT (MHz) 500 V CE = 10V 400 300 200 100 0 I C - COLLECTOR CURRENT (A) Gain Bandwidth Product vs Collector Current Safe Operating Area TO-226 10 10 S * 1 DC T 100 S* DC *PULSED OPERATION T A = 25 C T CO 1.0 LLE CT m OR s* LE AM AD BIE =2 NT 5 C = 0.1 25 C LIMIT DETERMINED BY BV CEO 0.01 1 10 100 I C - COLLECTOR CURRENT (mA) 1000 1 10 V CE - COLLECTOR-EMITTER VOLTAGE (V) Pr38 100 TN6715A / NZT6715 NPN General Purpose Amplifier (continued) Typical Characteristics (continued) Power Dissipation vs Ambient Temperature 1 PD - POWER DISSIPATION (W) 0.75 TO-226 SOT-223 0.5 0.25 0 0 25 50 75 100 TEMPERATURE (o C) 125 150 |
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